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RJK6032DPD-00#J2

RJK6032DPD-00#J2

RJK6032DPD-00#J2

Renesas Electronics America

Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) MP-3A T/R

SOT-23

RJK6032DPD-00#J2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 40.3W Tc
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
RoHS Status ROHS3 Compliant

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