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RQK0609CQDQS#H1

RQK0609CQDQS#H1

RQK0609CQDQS#H1

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 100m Ω @ 2A, 4.5V ±12V 470pF @ 10V 5nC @ 4.5V 60V TO-243AA

SOT-23

RQK0609CQDQS#H1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
Configuration Single
Power Dissipation-Max 1.5W Ta
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 56ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Radiation Hardening No
RoHS Status RoHS Compliant
RQK0609CQDQS#H1 Product Details

RQK0609CQDQS#H1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 470pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

RQK0609CQDQS#H1 Features


a continuous drain current (ID) of 4A
the turn-off delay time is 38 ns
a 60V drain to source voltage (Vdss)


RQK0609CQDQS#H1 Applications


There are a lot of Renesas Electronics America
RQK0609CQDQS#H1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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