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71256S100TDB

71256S100TDB

71256S100TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

71256S100TDB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature -55°C~125°C TA
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size 256Kb 32K x 8
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 100ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
130 $22.52877 $2928.7401
71256S100TDB Product Details

71256S100TDB Overview


There is a memory type Volatile for this type of device. It comes in a Tube. There is a 28-CDIP (0.300, 7.62mm) case embedded in it. Memory size on the chip is 256Kb 32K x 8. SRAM-format memory is used in this device, which is a mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 4.5V~5.5V can be supplied to memory ics. The recommended mounting type for memory ics is Through Hole.

71256S100TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

71256S100TDB Applications


There are a lot of Renesas Electronics America Inc. 71256S100TDB Memory applications.

  • hard disk drive (HDD)
  • DVD disk buffer
  • networking
  • eSRAM
  • supercomputers
  • embedded logic
  • eDRAM
  • cell phones
  • servers
  • workstations,

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