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7164L35DB

7164L35DB

7164L35DB

Renesas Electronics America Inc.

Memory IC

SOT-23

7164L35DB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.600, 15.24mm)
Supplier Device Package 28-CerDip
Operating Temperature -55°C~125°C TA
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size 64Kb 8K x 8
Memory Type Volatile
Access Time 35ns
Memory Format SRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 35ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $150.636880 $150.63688
10 $142.110264 $1421.10264
100 $134.066287 $13406.6287
500 $126.477629 $63238.8145
1000 $119.318518 $119318.518
7164L35DB Product Details

7164L35DB Overview


In this case, the memory type of the device can be classified as Volatile. It is supplied votage within Tube. 28-CDIP (0.600, 15.24mm) case encloses it. There is an 64Kb 8K x 8 memory capacity on the chip. As with most mainstream devices, this one uses SRAM-format memory. Due to its wide temperature range of -55°C~125°C TA, this device is well suited to a wide range of applications that require high performance. The supply voltage can be up to 4.5V~5.5V. The recommended mounting type for this device is Through Hole.

7164L35DB Features


Package / Case: 28-CDIP (0.600, 15.24mm)

7164L35DB Applications


There are a lot of Renesas Electronics America Inc. 7164L35DB Memory applications.

  • networks
  • personal digital assistants
  • hard disk drive (HDD)
  • mainframes
  • networking
  • DVD disk buffer
  • workstations,
  • personal computers
  • printers
  • telecommunications

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