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7164S25TDB

7164S25TDB

7164S25TDB

Renesas Electronics America Inc.

Memory IC

SOT-23

7164S25TDB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 28-CDIP (0.300, 7.62mm)
Operating Temperature -55°C~125°C TA
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Memory Size 64Kb 8K x 8
Memory Type Volatile
Memory Format SRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $184.446960 $184.44696
10 $174.006566 $1740.06566
100 $164.157138 $16415.7138
500 $154.865224 $77432.612
1000 $146.099268 $146099.268
7164S25TDB Product Details

7164S25TDB Overview


A Volatile-type memory can be classified as the memory type of this device. You can get memory ics in a Tube case. The 28-CDIP (0.300, 7.62mm) case contains it. On the chip, there is an 64Kb 8K x 8 memory, which is the size of the chip's memory. This device uses a SRAM-format memory, which is of mainstream design. Due to its extended operating temperature range, the device is well suited for a wide range of demanding applications. A voltage of 4.5V~5.5V can be supplied to memory ics. It is recommended that the mounting type be Through Hole.

7164S25TDB Features


Package / Case: 28-CDIP (0.300, 7.62mm)

7164S25TDB Applications


There are a lot of Renesas Electronics America Inc. 7164S25TDB Memory applications.

  • eSRAM
  • eDRAM
  • mainframes
  • Cache memory
  • supercomputers
  • main computer memory
  • hard disk drive (HDD)
  • servers
  • networks
  • telecommunications

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