HIP2100EIBZ Overview

A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Gate drivers is package in Tube case.2 drivers are incorporated for its configuration.The device is mounted in the direction of Surface Mount.Using a 9V~14V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Its configuration is based on a total of 8 terminations.Numerous related parts can be found under its base part number HIP2100.This device operates with 12V supply voltage.8 pins are present on the component.There can be a voltage up to 114V on the high-side (Bootstrap).

HIP2100EIBZ Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2100EIBZ Applications

There are a lot of Renesas Electronics America Inc. HIP2100EIBZ gate drivers applications.

• High current laser/LED systems
• Motor Drives
• Pulse transformer drivers
• Portable Media Players
• Video amplifiers
• UPS systems
• Motor Controls
• Active Clamp Flyback or Forward and Synchronous Rectifier
• Portable Navigation Devices
• Refrigerator