HIP2101IBZ Overview

A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.The packaging method is indicated by Tube.This device is equipped with 2 drivers for its configuration.In the direction of Surface Mount, gate drivers is mounted.When the supply voltage is 9V~14V it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.In this device, temperatures must not exceed -55°C~150°C TJ.Input type of Non-Inverting is used.It's configured with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP2101.The device is specifically designed to operate at 12V volts.The board contains 8 pins for component connections.Ideally, the high-side voltage should not exceed 114V.

HIP2101IBZ Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2101IBZ Applications

There are a lot of Renesas Electronics America Inc. HIP2101IBZ gate drivers applications.

• Pulse transformer drivers
• Welding
• High current laser/LED systems
• White Goods - Air Conditioner, Washing Machine,
• Refrigerator
• Power factor correction (PFC) circuits
• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
• Isolated Supplies for controller area network (CAN),
• AC-DC Inverters
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,