HIP2101IRZ Overview

A higher degree of flexibility is achieved by adopting its 16-VQFN Exposed Pad package.A package of Tray has been used.There are 2 drivers installed for this device.Its recommended mounting way is Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.For this device, the temperature range is -55°C~150°C TJ.Non-Inverting is the input type used in this program.Mosfet driver contains a variety of related parts under Mosfet drivers base part number HIP2101.The component has 16 pins.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 114V.

HIP2101IRZ Features

Embedded in the Tray package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2101IRZ Applications

There are a lot of Renesas Electronics America Inc. HIP2101IRZ gate drivers applications.

• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Multicolor LED/laser displays
• Portable Media Players
• Motor controllers
• Motor Drives
• Uninterruptible Power Supplies (UPS)
• High current laser/LED systems
• High-speed communications
• General Purpose 3-Phase Inverter
• Refrigerator