Surface Mount Tape & Reel (TR) Active Gate Drivers ICs Non-Inverting 2 60V V 8-WDFN Exposed Pad Half-Bridge
SOT-23
HIP2103FRTAAZ-T7A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Operating Temperature
-40°C~125°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Supply
4.5V~14V
Pin Count
8
Input Type
Non-Inverting
Rise / Fall Time (Typ)
8ns 2ns
Channel Type
Independent
Number of Drivers
2
Driven Configuration
Half-Bridge
Gate Type
N-Channel MOSFET
Current - Peak Output (Source, Sink)
1A 1A
Logic Voltage - VIL, VIH
1.63V 2.06V
High Side Voltage - Max (Bootstrap)
60V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.160611
$2.160611
10
$2.038312
$20.38312
100
$1.922936
$192.2936
500
$1.814091
$907.0455
1000
$1.711406
$1711.406
HIP2103FRTAAZ-T7A Product Details
HIP2103FRTAAZ-T7A Overview
A higher degree of flexibility is achieved by adopting its 8-WDFN Exposed Pad package.A packaging method of Tape & Reel (TR) is used.This device is equipped with 2 drivers for its configuration.Gate drivers is mounted in the way of Surface Mount.Using a 4.5V~14V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.There is a gate type of N-Channel MOSFET in this design.Temperature range -40°C~125°C TJ is allowed for this device.Input type of Non-Inverting is used.The number of component pins is 8.High-side voltage - Max (Bootstrap) can be as low as 60V.
HIP2103FRTAAZ-T7A Features
Embedded in the Tape & Reel (TR) package 2 drivers Employing a gate type of N-Channel MOSFET High-side voltage - Max (Bootstrap) of 60V
HIP2103FRTAAZ-T7A Applications
There are a lot of Renesas Electronics America Inc. HIP2103FRTAAZ-T7A gate drivers applications.
UPS systems
Motor Drives
Refrigerator
DC-DC Converters
High-voltage isolated DC-DC converters
RGB applications
White Goods - Air Conditioner, Washing Machine,
Video amplifiers
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,