Surface Mount Tube Obsolete Gate Drivers ICs Inverting 2 114V V 10-WDFN Exposed Pad HIP2123 Half-Bridge
SOT-23
HIP2123FRTAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
10-WDFN Exposed Pad
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
2 (1 Year)
Voltage - Supply
8V~14V
Base Part Number
HIP2123
Input Type
Inverting
Rise / Fall Time (Typ)
10ns 10ns
Channel Type
Independent
Number of Drivers
2
Driven Configuration
Half-Bridge
Gate Type
N-Channel MOSFET
Current - Peak Output (Source, Sink)
2A 2A
Logic Voltage - VIL, VIH
1.4V 2.2V
High Side Voltage - Max (Bootstrap)
114V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.36000
$3.36
500
$3.3264
$1663.2
1000
$3.2928
$3292.8
1500
$3.2592
$4888.8
2000
$3.2256
$6451.2
2500
$3.192
$7980
HIP2123FRTAZ Product Details
HIP2123FRTAZ Overview
Gate drivers provides greater flexibilGate driversy to use the 10-WDFN Exposed Pad package.A package of Tube has been used.There are 2 drivers installed for this device.The device is mounted in the direction of Surface Mount.When the supply voltage is 8V~14V it is able to demonstrate its superiority.The gate type on this device is N-Channel MOSFET.This device is allowed to operate in a temperature range of -55°C~150°C TJ.The input type for this program is Inverting.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP2123.The high-side voltage - Max (Bootstrap) can be up to 114V.
HIP2123FRTAZ Features
Embedded in the Tube package 2 drivers Employing a gate type of N-Channel MOSFET High-side voltage - Max (Bootstrap) of 114V
HIP2123FRTAZ Applications
There are a lot of Renesas Electronics America Inc. HIP2123FRTAZ gate drivers applications.
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