HIP6603BECBZ-T Overview

The 8-SOIC (0.154, 3.90mm Width) Exposed Pad package provides greater flexibility.A packaging method of Tape & Reel (TR) is indicated.The configuration is supported by 2 drivers.Surface Mount is mounted in the way.In the absence of a 10.8V~13.2V supply voltage, it can demonstrate its superiority.This gate type has a N-Channel MOSFET design.This device is allowed to operate in a temperature range of 0°C~125°C TJ.The input type for this program is Non-Inverting.Mosfet driver consists of 8 terminations as Mosfet drivers foundation.Mosfet driver contains a variety of related parts under Mosfet drivers base part number HIP6603B.Mosfet driver is designed specifically to run on 12V volts of power.Maximum (Bootstrap) voltage can be up to 15V.

HIP6603BECBZ-T Features

Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6603BECBZ-T Applications

There are a lot of Renesas Electronics America Inc. HIP6603BECBZ-T gate drivers applications.

• Motor Control
• High power buffers
• High current laser/LED systems
• Solar inverters
• High-voltage isolated DC-DC converters
• Topologies
• Isolated Supplies for controller area network (CAN),
• Smart Phones
• Motor Drives
• Industrial Motor Inverter - Power Tools, Robotics