Surface Mount Tape & Reel (TR) Obsolete Gate Drivers ICs Non-Inverting 2 33V V 8-VQFN Exposed Pad ISL6605 Half-Bridge
SOT-23
ISL6605CR-T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Surface Mount
YES
Operating Temperature
0°C~125°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Voltage - Supply
4.5V~5.5V
Terminal Position
QUAD
Terminal Form
NO LEAD
Number of Functions
1
Supply Voltage
5V
Terminal Pitch
0.65mm
Base Part Number
ISL6605
JESD-30 Code
S-PQCC-N8
Input Type
Non-Inverting
Rise / Fall Time (Typ)
8ns 8ns
Channel Type
Synchronous
Number of Drivers
2
Driven Configuration
Half-Bridge
Gate Type
N-Channel MOSFET
Current - Peak Output (Source, Sink)
2A 2A
High Side Driver
YES
Logic Voltage - VIL, VIH
1V 2V
High Side Voltage - Max (Bootstrap)
33V
Height Seated (Max)
1mm
Length
3mm
Width
3mm
RoHS Status
Non-RoHS Compliant
ISL6605CR-T Product Details
ISL6605CR-T Overview
In order to increase flexibility, the package 8-VQFN Exposed Pad is used.The packaging method is indicated by Tape & Reel (TR).Configuration is supported by 2 drivers.Surface Mount is mounted in the way.A supply voltage of 4.5V~5.5V demonstrates its superiority.Gate type N-Channel MOSFET is designed for it.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.As a result of its configuration, it contains a maximum of 8 terminations.There are various related parts under its base part number ISL6605.The device is specifically designed to function with a supply voltage of 5V V.The high-side voltage - Max (Bootstrap) can be up to 33V.
ISL6605CR-T Features
Embedded in the Tape & Reel (TR) package 2 drivers Employing a gate type of N-Channel MOSFET High-side voltage - Max (Bootstrap) of 33V
ISL6605CR-T Applications
There are a lot of Renesas Electronics America Inc. ISL6605CR-T gate drivers applications.