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H5N5005PL-E

H5N5005PL-E

H5N5005PL-E

RENESAS TECHNOLOGY CORP

H5N5005PL-E datasheet pdf and Unclassified product details from RENESAS TECHNOLOGY CORP stock available on our website

SOT-23

H5N5005PL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
JESD-609 Code e2
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN COPPER
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 500V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 270W
RoHS Status RoHS Compliant

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