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FQB7N80TM

FQB7N80TM

FQB7N80TM

ROCHESTER ELECTRONICS LLC

FQB7N80TM datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

SOT-23

FQB7N80TM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e0
Pbfree Code no
Moisture Sensitivity Level (MSL) NOT SPECIFIED
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 6.6A
Drain-source On Resistance-Max 1.5Ohm
Pulsed Drain Current-Max (IDM) 26.4A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 580 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant

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