FQD3N60CTM

new-10%

Manufacturer part number:FQD3N60CTM

Manufacturer:ROCHESTER ELECTRONICS LLC

Description:FQD3N60CTM datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

Case Package:SOT-23

Datasheet:FQD3N60CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
JESD-609 Code	e3
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-252
Drain Current-Max (Abs) (ID)	2.4A
Drain-source On Resistance-Max	3.4Ohm
Pulsed Drain Current-Max (IDM)	9.6A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	150 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant