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FQD60N03LTM

  • FQD60N03LTM
  • FQD60N03LTM

FQD60N03LTM

FQD60N03LTM

ROCHESTER ELECTRONICS LLC

FQD60N03LTM datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

SOT-23

FQD60N03LTM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
Terminal Finish NOT SPECIFIED
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain Current-Max (Abs) (ID) 40.3A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 161A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 220 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.55000 $0.55
500 $0.5445 $272.25
1000 $0.539 $539
1500 $0.5335 $800.25
2000 $0.528 $1056
2500 $0.5225 $1306.25

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