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FQD6N60CTF

FQD6N60CTF

FQD6N60CTF

ROCHESTER ELECTRONICS LLC

FQD6N60CTF datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

SOT-23

FQD6N60CTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN
Additional Feature FAST SWITCHING
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 2Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 300 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

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