IPB097N08N3G

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Manufacturer part number:IPB097N08N3G

Manufacturer:ROCHESTER ELECTRONICS LLC

Description:IPB097N08N3G datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

Case Package:SOT-23

Datasheet:IPB097N08N3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
JESD-609 Code	e3
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	MATTE TIN
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-263AB
Drain Current-Max (Abs) (ID)	70A
Drain-source On Resistance-Max	0.0097Ohm
Pulsed Drain Current-Max (IDM)	280A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	90 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant