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SSW2N60BTM

SSW2N60BTM

SSW2N60BTM

ROCHESTER ELECTRONICS LLC

SSW2N60BTM datasheet pdf and Unclassified product details from ROCHESTER ELECTRONICS LLC stock available on our website

SOT-23

SSW2N60BTM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code yes
Moisture Sensitivity Level (MSL) NOT APPLICABLE
Terminal Finish MATTE TIN
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 5Ohm
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 120 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.43000 $0.43
500 $0.4257 $212.85
1000 $0.4214 $421.4
1500 $0.4171 $625.65
2000 $0.4128 $825.6
2500 $0.4085 $1021.25

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