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2N4953

  • 2N4953
  • 2N4953

2N4953

2N4953

Rochester Electronics, LLC

2N4953 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N4953 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Turn Off Time-Max (toff) 400ns
Turn On Time-Max (ton) 40ns
RoHS Status ROHS3 Compliant
2N4953 Product Details

2N4953 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 150mA 10V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 15mA, 150mA.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2N4953 Features


the DC current gain for this device is 200 @ 150mA 10V
the vce saturation(Max) is 300mV @ 15mA, 150mA

2N4953 Applications


There are a lot of Rochester Electronics, LLC 2N4953 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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