2N5551ZL1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.The part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 160VV - Maximum voltage.

2N5551ZL1 Features

the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5551ZL1 Applications

There are a lot of Rochester Electronics, LLC 2N5551ZL1 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting