2N6043 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N6043 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
75W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 4A 4V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
2V @ 16mA, 4A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
RoHS Status
Non-RoHS Compliant
2N6043 Product Details
2N6043 Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.Single BJT transistor comes in a supplier device package of TO-220AB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
2N6043 Features
the DC current gain for this device is 1000 @ 4A 4V the vce saturation(Max) is 2V @ 16mA, 4A the supplier device package of TO-220AB
2N6043 Applications
There are a lot of Rochester Electronics, LLC 2N6043 applications of single BJT transistors.