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2N6043

2N6043

2N6043

Rochester Electronics, LLC

2N6043 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N6043 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-65°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 75W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 2V @ 16mA, 4A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 8A
RoHS StatusNon-RoHS Compliant
In-Stock:4621 items

2N6043 Product Details

2N6043 Overview


This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.Single BJT transistor comes in a supplier device package of TO-220AB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

2N6043 Features


the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 2V @ 16mA, 4A
the supplier device package of TO-220AB

2N6043 Applications


There are a lot of Rochester Electronics, LLC 2N6043 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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