BF493S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BF493S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
2V @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
Non-RoHS Compliant
BF493S Product Details
BF493S Overview
This device has a DC current gain of 40 @ 10mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 2mA, 20mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.A 350V maximal voltage - Collector Emitter Breakdown is present in the device.
BF493S Features
the DC current gain for this device is 40 @ 10mA 10V the vce saturation(Max) is 2V @ 2mA, 20mA a transition frequency of 50MHz
BF493S Applications
There are a lot of Rochester Electronics, LLC BF493S applications of single BJT transistors.