FJN3303BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
FJN3303BU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1.1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 500mA 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
FJN3303BU Product Details
FJN3303BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 500mA 2V DC current gain.A VCE saturation (Max) of 3V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.This device displays a 400V maximum voltage - Collector Emitter Breakdown.
FJN3303BU Features
the DC current gain for this device is 14 @ 500mA 2V the vce saturation(Max) is 3V @ 500mA, 1.5A a transition frequency of 4MHz
FJN3303BU Applications
There are a lot of Rochester Electronics, LLC FJN3303BU applications of single BJT transistors.