HIP2101EIBT Overview

In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tape & Reel (TR) is used.This device is equipped with 2 drivers for its configuration.There is a mounting bracket in the way of Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Non-Inverting is used as its input type.Initially, the configuration is composed of 8 terminations.A voltage of 12V is required for its operation.The number of component pins is 8.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.

HIP2101EIBT Features

Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2101EIBT Applications

There are a lot of Rochester Electronics, LLC HIP2101EIBT gate drivers applications.

• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Automotive Applications
• High power buffers
• High-voltage isolated DC-DC converters
• Commercial and agricultural vehicles (CAV)
• Telecom switch mode power supplies
• Motor Controls
• Portable Media Players
• Industrial Motor Inverter - Power Tools, Robotics
• Isolated Gate Driver Supplies