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HIP2101EIBT

HIP2101EIBT

HIP2101EIBT

Rochester Electronics, LLC

Surface Mount Tape & Reel (TR) Obsolete Gate Drivers ICs Non-Inverting 2 114V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad Half-Bridge

SOT-23

HIP2101EIBT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Terminal Finish TIN LEAD
Voltage - Supply 9V~14V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 12V
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Input Type Non-Inverting
Rise / Fall Time (Typ) 10ns 10ns
Channel Type Independent
Number of Drivers 2
Turn On Time 0.056 µs
Output Peak Current Limit-Nom 2A
Driven Configuration Half-Bridge
Gate Type N-Channel MOSFET
Current - Peak Output (Source, Sink) 2A 2A
High Side Driver YES
Logic Voltage - VIL, VIH 0.8V 2.2V
Turn Off Time 0.056 µs
High Side Voltage - Max (Bootstrap) 114V
Height Seated (Max) 1.68mm
Length 4.89mm
Width 3.9mm
RoHS Status Non-RoHS Compliant
HIP2101EIBT Product Details

HIP2101EIBT Overview


In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tape & Reel (TR) is used.This device is equipped with 2 drivers for its configuration.There is a mounting bracket in the way of Surface Mount.When the supply voltage is 9V~14V it is able to demonstrate its superiority.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of -55°C~150°C TJ.Non-Inverting is used as its input type.Initially, the configuration is composed of 8 terminations.A voltage of 12V is required for its operation.The number of component pins is 8.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 114V.

HIP2101EIBT Features


Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2101EIBT Applications


There are a lot of Rochester Electronics, LLC HIP2101EIBT gate drivers applications.

  • Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
  • Automotive Applications
  • High power buffers
  • High-voltage isolated DC-DC converters
  • Commercial and agricultural vehicles (CAV)
  • Telecom switch mode power supplies
  • Motor Controls
  • Portable Media Players
  • Industrial Motor Inverter - Power Tools, Robotics
  • Isolated Gate Driver Supplies

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