HIP6601BECB Overview

Its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package is adopted for higher flexibility.There is a package in the form of Tube.This device is equipped with 2 drivers for its configuration.The device is mounted in the direction of Surface Mount.By using 10.8V~13.2V supply voltage, it is able to demonstrate its superiority.N-Channel MOSFET is the gate type used for this design.This device is allowed to operate in a temperature range of 0°C~125°C TJ.The input type is Non-Inverting.Its configuration starts with 8 terminations.The device is specifically designed to function with a supply voltage of 12V V.The component has 8 pins.Maximum (Bootstrap) voltage is 15V.

HIP6601BECB Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6601BECB Applications

There are a lot of Rochester Electronics, LLC HIP6601BECB gate drivers applications.

• General Purpose 3-Phase Inverter
• High power buffers
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Uninterruptible Power Supplies (UPS)
• Video amplifiers
• Broadcast equipment
• Telecom switch mode power supplies
• RGB applications
• LCD/LCoS/DLP portable and embedded pico projectors
• AC-DC Inverters