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KSC838CYTA

KSC838CYTA

KSC838CYTA

Rochester Electronics, LLC

KSC838CYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSC838CYTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 12V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 30mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
KSC838CYTA Product Details

KSC838CYTA Overview


In this device, the DC current gain is 120 @ 2mA 12V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 250MHz in the part.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

KSC838CYTA Features


the DC current gain for this device is 120 @ 2mA 12V
the vce saturation(Max) is 400mV @ 1mA, 10mA
a transition frequency of 250MHz

KSC838CYTA Applications


There are a lot of Rochester Electronics, LLC KSC838CYTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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