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MJE800

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  • MJE800

MJE800

MJE800

Rochester Electronics, LLC

MJE800 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MJE800 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e0
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
Terminal Finish TIN LEAD
Additional Feature BUILT IN BIAS RESISTOR
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max 40W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 4A
Transition Frequency 1MHz
RoHS Status Non-RoHS Compliant
MJE800 Product Details

MJE800 Overview


DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).In this part, there is a transition frequency of 1MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).

MJE800 Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
a transition frequency of 1MHz

MJE800 Applications


There are a lot of Rochester Electronics, LLC MJE800 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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