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MPS4250G

MPS4250G

MPS4250G

Rochester Electronics, LLC

MPS4250G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MPS4250G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 50mA
RoHS StatusROHS3 Compliant
In-Stock:2672 items

MPS4250G Product Details

MPS4250G Overview


In this device, the DC current gain is 250 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500μA, 10mA.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

MPS4250G Features


the DC current gain for this device is 250 @ 10mA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA

MPS4250G Applications


There are a lot of Rochester Electronics, LLC MPS4250G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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