MPS8598 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS8598 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
150MHz
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
MPS8598 Product Details
MPS8598 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.In this part, there is a transition frequency of 150MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
MPS8598 Features
the DC current gain for this device is 100 @ 1mA 5V the vce saturation(Max) is 400mV @ 5mA, 100mA a transition frequency of 150MHz
MPS8598 Applications
There are a lot of Rochester Electronics, LLC MPS8598 applications of single BJT transistors.