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PN2907TFR

PN2907TFR

PN2907TFR

Rochester Electronics, LLC

PN2907TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

PN2907TFR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 800mA
Turn Off Time-Max (toff) 100ns
Turn On Time-Max (ton) 45ns
RoHS Status ROHS3 Compliant
PN2907TFR Product Details

PN2907TFR Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PN2907TFR Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

PN2907TFR Applications


There are a lot of Rochester Electronics, LLC PN2907TFR applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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