PN5138 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
PN5138 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
RoHS Status
ROHS3 Compliant
PN5138 Product Details
PN5138 Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).This device displays a 30V maximum voltage - Collector Emitter Breakdown.
PN5138 Features
the DC current gain for this device is 50 @ 10mA 10V the vce saturation(Max) is 300mV @ 500μA, 10mA
PN5138 Applications
There are a lot of Rochester Electronics, LLC PN5138 applications of single BJT transistors.