2SA1515STPQ Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -200mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 1A volts can be achieved.
2SA1515STPQ Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SA1515STPQ Applications
There are a lot of ROHM Semiconductor 2SA1515STPQ applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
