2SA1900T100Q Overview

In this device, the DC current gain is 120 @ 500mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 1A volts.

2SA1900T100Q Features

the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

2SA1900T100Q Applications

There are a lot of ROHM Semiconductor 2SA1900T100Q applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface