2SC4505T100Q Overview

In this device, the DC current gain is 120 @ 10mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 50mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

2SC4505T100Q Features

the DC current gain for this device is 120 @ 10mA 10V
a collector emitter saturation voltage of 50mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 20MHz

2SC4505T100Q Applications

There are a lot of ROHM Semiconductor 2SC4505T100Q applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver