2SCR372PT100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SCR372PT100R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
SINGLE
Terminal Form
FLAT
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
220MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
120V
Current - Collector (Ic) (Max)
700mA
Transition Frequency
220MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.635496
$17.635496
10
$16.637260
$166.3726
100
$15.695529
$1569.5529
500
$14.807103
$7403.5515
1000
$13.968965
$13968.965
2SCR372PT100R Product Details
2SCR372PT100R Overview
In this device, the DC current gain is 120 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 220MHz.Maximum collector currents can be below 700mA volts.
2SCR372PT100R Features
the DC current gain for this device is 120 @ 100mA 5V the vce saturation(Max) is 300mV @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 220MHz
2SCR372PT100R Applications
There are a lot of ROHM Semiconductor 2SCR372PT100R applications of single BJT transistors.