2SCR572D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR572D3TL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.727440
$0.72744
10
$0.686264
$6.86264
100
$0.647419
$64.7419
500
$0.610773
$305.3865
1000
$0.576201
$576.201
2SCR572D3TL1 Product Details
2SCR572D3TL1 Overview
In this device, the DC current gain is 200 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 100mA, 2A.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
2SCR572D3TL1 Features
the DC current gain for this device is 200 @ 500mA 3V the vce saturation(Max) is 400mV @ 100mA, 2A
2SCR572D3TL1 Applications
There are a lot of ROHM Semiconductor 2SCR572D3TL1 applications of single BJT transistors.