Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SCR572D3TL1

2SCR572D3TL1

2SCR572D3TL1

ROHM Semiconductor

2SCR572D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR572D3TL1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.727440 $0.72744
10 $0.686264 $6.86264
100 $0.647419 $64.7419
500 $0.610773 $305.3865
1000 $0.576201 $576.201
2SCR572D3TL1 Product Details

2SCR572D3TL1 Overview


In this device, the DC current gain is 200 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 100mA, 2A.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

2SCR572D3TL1 Features


the DC current gain for this device is 200 @ 500mA 3V
the vce saturation(Max) is 400mV @ 100mA, 2A

2SCR572D3TL1 Applications


There are a lot of ROHM Semiconductor 2SCR572D3TL1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News