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2SCR572D3TL1

2SCR572D3TL1

2SCR572D3TL1

ROHM Semiconductor

2SCR572D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR572D3TL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:8709 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.727440$0.72744
10$0.686264$6.86264
100$0.647419$64.7419
500$0.610773$305.3865
1000$0.576201$576.201

2SCR572D3TL1 Product Details

2SCR572D3TL1 Overview


In this device, the DC current gain is 200 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 100mA, 2A.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

2SCR572D3TL1 Features


the DC current gain for this device is 200 @ 500mA 3V
the vce saturation(Max) is 400mV @ 100mA, 2A

2SCR572D3TL1 Applications


There are a lot of ROHM Semiconductor 2SCR572D3TL1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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