BS2101F-E2 Overview

The 8-SOIC (0.173, 4.40mm Width) package provides greater flexibility.A packaging method of Cut Tape (CT) is used.This device is equipped with 2 drivers for its configuration.In this case, gate drivers is mounted along the way of Surface Mount.When the supply voltage is set to 10V~18V, it can demonstrate its superiority.A gate type of IGBT, N-Channel MOSFET has been used in its design.In this device, temperatures must not exceed -40°C~125°C TA.Non-Inverting is used as its input type.Its configuration is based on a total of 8 terminations.Mosfet driver is designed specifically to run on 15V volts of power.The interface chip of the system is HALF BRIDGE BASED MOSFET DRIVER.Maximum (Bootstrap) voltage can be up to 600V.Additionally, unique technology can be utilized to provide SEATED HT-CALCULATED.

BS2101F-E2 Features

Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V
SEATED HT-CALCULATED

BS2101F-E2 Applications

There are a lot of ROHM Semiconductor BS2101F-E2 gate drivers applications.

• LCD/LCoS/DLP portable and embedded pico projectors
• Industrial motor drives - compact, standard, premium, servo drives
• Isolated Supplies for controller area network (CAN),
• Uninterruptible Power Supplies (UPS)
• Power factor correction (PFC) circuits
• Refrigerator
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Smart Phones
• PCMCIA applications
• UPS systems