BS2114F-E2 Overview

A higher degree of flexibility is achieved by adopting its 8-SOIC (0.173, 4.40mm Width) package.A total of 2 drivers are integrated into its configuration.Surface Mount is the way in which it is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET has been used in its design.-40°C~125°C TA is the allowed temperature range for this device.Mosfet driver uses Inverting as Mosfet drivers input type.It's configured with 8 terminations.The device is specifically designed to function with a supply voltage of 15V V.HALF BRIDGE BASED MOSFET DRIVER is employed as its interface IC.Ideally, the high-side voltage should not exceed 600V.

BS2114F-E2 Features

2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

BS2114F-E2 Applications

There are a lot of ROHM Semiconductor BS2114F-E2 gate drivers applications.

• Power factor correction (PFC) circuits
• UPS systems
• White Goods - Air Conditioner, Washing Machine,
• Pulse transformer drivers
• High current laser/LED systems
• serial peripheral interface (SPI), I2C
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• AC-DC Inverters
• Solar power supplies
• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,