BS2132F-E2 Overview

The 28-SOIC (0.295, 7.50mm Width) package offers greater flexibility.Configuration is supported by 3 drivers.There is a mounting bracket in the way of Surface Mount.In the absence of a 11.5V~20V supply voltage, its superiority can be demonstrated.Gate type IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~125°C TA.Non-Inverting is used as the input type.Its interface IC is HALF BRIDGE BASED MOSFET DRIVER.A high-side voltage can be set up to 600V (Bootstrap).

BS2132F-E2 Features

3 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

BS2132F-E2 Applications

There are a lot of ROHM Semiconductor BS2132F-E2 gate drivers applications.

• Solar inverters
• Power factor correction (PFC) circuits
• Pulse transformer drivers
• High current laser/LED systems
• Dual-Battery Systems
• PCMCIA applications
• Multicolor LED/laser displays
• Isolated Supplies for controller area network (CAN),
• Head-up and Head mounted displays
• High-voltage isolated DC-DC converters