DTC114ECAT116

new-10%

Manufacturer part number:DTC114ECAT116

Manufacturer:ROHM Semiconductor

Description:TRANS PREBIAS NPN 200MW SST3

Case Package:SOT-23

Datasheet:DTC114ECAT116 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1.0
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	DTC114
Pin Count	3
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
hFE Min	30
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free