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DTC114WSATP

DTC114WSATP

DTC114WSATP

ROHM Semiconductor

DTC114WSATP datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available on our website

SOT-23

DTC114WSATP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Transistor Element Material SILICON
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 0.47
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTC114
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 24 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
hFE Min 24
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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