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DTC115GUAT106

DTC115GUAT106

DTC115GUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

SOT-23

DTC115GUAT106 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTC115
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 82
Resistor - Emitter Base (R2) 100 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.249163 $0.249163
10 $0.235059 $2.35059
100 $0.221754 $22.1754
500 $0.209202 $104.601
1000 $0.197360 $197.36

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