DTD114ESTP

new-10%

Manufacturer part number:DTD114ESTP

Manufacturer:ROHM Semiconductor

Description:TRANS PREBIAS NPN 300MW SPT

Case Package:SOT-23

Datasheet:DTD114ESTP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	SC-72 Formed Leads
Transistor Element Material	SILICON
Packaging	Tape & Box (TB)
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	300mW
Peak Reflow Temperature (Cel)	260
Current Rating	500mA
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	DTD114
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	200MHz
Frequency - Transition	200MHz
hFE Min	56
Resistor - Base (R1)	10 k Ω
Resistor - Emitter Base (R2)	10 k Ω
VCEsat-Max	0.3 V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free