DTD114GKT146

new-10%

Manufacturer part number:DTD114GKT146

Manufacturer:ROHM Semiconductor

Description:TRANS PREBIAS NPN 200MW SMT3

Case Package:SOT-23

Datasheet:DTD114GKT146 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	500mA
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	DTD114
Pin Count	3
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200mW
Transistor Application	SWITCHING
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	200MHz
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	56
Continuous Collector Current	500mA
Resistor - Emitter Base (R2)	10 k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free