DTD123TSTP

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DTD123TSTP

Manufacturer part number:DTD123TSTP

Manufacturer:ROHM Semiconductor

Description:DTD123TSTP datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:DTD123TSTP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	SC-72 Formed Leads
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	DIGITAL
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Max Power Dissipation	300mW
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	DTD123
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	300mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage	40V
Transition Frequency	200MHz
Frequency - Transition	200MHz
Resistor - Base (R1)	2.2 k Ω
VCEsat-Max	0.3 V
RoHS Status	ROHS3 Compliant