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DTD133HKT146

DTD133HKT146

DTD133HKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

SOT-23

DTD133HKT146 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 59
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 3
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number DTD133
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Frequency - Transition 200MHz
hFE Min 56
Resistor - Base (R1) 3.3 k Ω
Resistor - Emitter Base (R2) 10 k Ω
VCEsat-Max 0.3 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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