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EDZVT2R11B

  • EDZVT2R11B
  • EDZVT2R11B

EDZVT2R11B

EDZVT2R11B

ROHM Semiconductor

ZENER DIODE 30Ohm ±2% 11V 100nA @ 8V -55°C~150°C 150mW 2 Terminations SC-79, SOD-523

SOT-23

EDZVT2R11B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2016
Tolerance ±2%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.50
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 30Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 8V
Power Dissipation 150mW
Max Reverse Leakage Current 100nA
Impedance-Max 30Ohm
Reference Voltage 11V
Zener Voltage 11V
Working Test Current 5mA
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067330 $0.06733
10 $0.063519 $0.63519
100 $0.059924 $5.9924
500 $0.056532 $28.266
1000 $0.053332 $53.332
EDZVT2R11B Product Details

EDZVT2R11B Overview


The reverse leakage current needed to power this electric device is 100nA @ 8V.The reverse leakage current reaches zero at its maximum.Setting the working test voltage to 5mA will allow this device to operate.

EDZVT2R11B Features


reverse leakage current of 100nA @ 8V
100nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


EDZVT2R11B Applications


There are a lot of ROHM Semiconductor
EDZVT2R11B applications of zener single diodes.


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