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EDZVT2R6.8B

  • EDZVT2R6.8B
  • EDZVT2R6.8B

EDZVT2R6.8B

EDZVT2R6.8B

ROHM Semiconductor

ZENER DIODE 40Ohm ±2% 6.8V 500nA @ 3.5V -55°C~150°C 150mW 2 Terminations SC-79, SOD-523

SOT-23

EDZVT2R6.8B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Tolerance ±2%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.50
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 40Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 3.5V
Power Dissipation 150mW
Max Reverse Leakage Current 500nA
Impedance-Max 40Ohm
Reference Voltage 6.8V
Zener Voltage 6.8V
Working Test Current 5mA
Reverse Test Voltage 3.5V
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
EDZVT2R6.8B Product Details

EDZVT2R6.8B Overview


The reverse leakage current for this electrical device is 500nA @ 3.5V.Reverse leakage currents can reach 500nA.This device should be operated with a 5mA working test voltage.To ensure that this device operates properly, diode is recommended that the reverse test voltage be set to 3.5V.

EDZVT2R6.8B Features


reverse leakage current of 500nA @ 3.5V
500nA @ 3.5V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


EDZVT2R6.8B Applications


There are a lot of ROHM Semiconductor
EDZVT2R6.8B applications of zener single diodes.


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