EMB51T2R

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EMB51T2R

Manufacturer part number:EMB51T2R

Manufacturer:ROHM Semiconductor

Description:EMB51T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:EMB51T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	150mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	150mV
Max Collector Current	30mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	22k Ω
Resistor - Emitter Base (R2)	22k Ω
RoHS Status	ROHS3 Compliant